A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology
نویسندگان
چکیده
منابع مشابه
Low Noise Low Power Transimpedance Amplifier in 0.18μm Cmos Technology
Low noise and low Power transimpedance amplifiers (TIA) are essential modules for optical sensor based systems. But low power and low noise TIAs are still a challenge for the scientists despite of rapid advances in complementary metal oxide semiconductor (CMOS) technology. This paper proposes a three-stage nested miller compensated (NMC) based design of low noise low power transimpedance amplif...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملLow Power Low Noise CMOS Chopper Amplifier
AbstractChopping is a proficient way to reduce the low frequency offset and 1/f noise in amplifiers. In this paper, a low power low noise CMOS chopper amplifier is presented. It is composed of a two stage amplifier. The first stage’s high output impedance and the equivalent Miller capacitance of the second stage constitute together a low pass filter, which reduces the power consumption. The cir...
متن کاملA 60-GHz Low Noise Amplifier in 0.13-μm CMOS
The low noise amplifier (LNA) serves as the first component of the radio frequency receiver system. The performance of LNA determines the sensitivity and selectivity of the receiver. In order to maximize performance the gain, noise figure and input matching of LNA needs to be optmized. This paper presents a 60GHz low noise amplifier on 0.13-μm standard CMOS technology designed using classical n...
متن کاملLow-Power Low-Noise Neural Amplifier in 0.18 μm FD-SOI Technology
For recording of neural signals from large population of neurons, stringent constraints are imposed on the design of neural amplifiers. We have designed neural amplifier in FDSOI technology in order to achieve lower power consumption, smaller area and better noise efficiency factor compared to the standard bulk processes. A symmetric pseudo resistor was realized with resistances on the order of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 2013
ISSN: 0882-7516,1563-5031
DOI: 10.1155/2013/953498